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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hoon Kim Young Chang Jo Hong Joo Song Dong Kyu Yoo Hyuck Ki Hong Sin-Hwan Lim Hwan Mok Jung Pyong Choi |
| Copyright Year | 2006 |
| Description | Author affiliation: KETI, SeongNam (Hoon Kim; Young Chang Jo; Hong Joo Song; Dong Kyu Yoo; Hyuck Ki Hong) |
| Abstract | Optical sensitivity improved InGaAs/InP heterojunction phototransistor (HPT) 1times128 one dimensional array chip and its CMOS readout IC have been designed and characterized for low light signal detection. We also present epitaxial structures and equivalent model to optimize the optical gain and shunt resistance characteristics. The device operation mechanism and experimental results are discussed. The experimental results show that our device has an optical sensitivity of 46 A/W. This high value of sensitivity originates from the optical gain-enhanced device structure. The proposed HPT also has hundreds of KOmega shunt resistance with high optical sensitivity under low illumination situation, which is enough for effective signal conversion through trans-impedance amplifier circuit. |
| Starting Page | 170 |
| Ending Page | 173 |
| File Size | 3556244 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424403758 |
| ISSN | 19300395 |
| DOI | 10.1109/ICSENS.2007.355746 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-10-22 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photodetectors CMOS integrated circuits Optical sensors Optical arrays Photonic integrated circuits Optical devices Indium gallium arsenide Indium phosphide Heterojunctions Phototransistors |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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