NDLI: A Novel Self-Adaptive Photosensing Active-Pixel Structure with Tunable Sensitivity for High Performance CMOS Image Sensors

Content Provider	IEEE Xplore Digital Library
Author	Sungsik Lee Kyounghoon Yang
Copyright Year	2006
Description	Author affiliation: Korea Adv. Inst. of Sci. & Technol., Daejeon (Sungsik Lee; Kyounghoon Yang)
Abstract	In this paper, a novel self-adaptive photosensing active-pixel structure with tunable sensitivity has been proposed and demonstrated for the first time, which is implemented by using a standard 0.35-mum CMOS logic process. For the desired performance characteristics of the proposed pixel structure, a new photogate structure is incorporated into the photodiode active-pixel structure. The sensitivity of the proposed pixel structure can be controlled due to tunable sensitivity operation by varying the bias voltage at the photogate $(V_{PG}).$ At a low voltage level of the photogate $(V_{PG}$ = 0 V), the pixel sensitivity of the new photogate pixel structure is improved by more than two-times compared to the conventional pixel. At a high voltage of $V_{PG}$ = 3 V, the dynamic range of the new structure is increased by more than 10 dB. Consequently, the new pixel structure allows performance tunability as well as optimization in both the dynamic range and the sensitivity of the image sensor cell.
Starting Page	299
Ending Page	302
File Size	4492089
Page Count	4
File Format	PDF
ISBN	1424403758
ISSN	19300395
DOI	10.1109/ICSENS.2007.355465
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-22
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS image sensors Photodiodes Dynamic range CMOS technology CMOS process CMOS logic circuits Pixel Voltage CMOS digital integrated circuits Digital cameras
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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