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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Palubiak, D. El-Desouki, M.M. Marinov, O. Deen, M.J. Qiyin Fang |
| Copyright Year | 2001 |
| Abstract | The design of a low-light level pixel in CMOS technology for biomedical applications is described. This pixel is also suitable for very high-speed applications, such as fluorescence lifetime imaging (FLIM) used for drug discovery and/or minimally-invasive optical biopsy. In order to achieve high-speed imaging using single-photon detection, a detector with a very low dead-time is needed. The single-photon avalanche-photodiode (SPAD) discussed in this work uses a mainstream deep-submicron CMOS technology in order to achieve ultrahigh-speed operation and high pixel fill-factor, with in-pixel active quench and reset circuits. The paper also presents an innovative approach for reducing the deadtime of the detector and an attractive technique for simultaneous high-speed image acquisition by all the pixels of an array in parallel. |
| Sponsorship | IEEE Sensors Council |
| Starting Page | 2401 |
| Ending Page | 2412 |
| Page Count | 12 |
| File Size | 2153862 |
| File Format | |
| ISSN | 1530437X |
| Volume Number | 11 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electric breakdown Junctions Photonics Layout Pixel CMOS integrated circuits CMOS technology single photon detectors Avalanche photodiode (APD) CMOS image sensor integrated photodetector silicon photodetector single photon avalanche diode (SPAD) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Instrumentation Electrical and Electronic Engineering |
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