NDLI: Focused ion beam assisted ohmic metallizations to p-6H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Iliadis, A.A. Androneseu, S.N. Talyansky, V. Edinger, K. Orloff, J.H. Woods, M.C. Jones, K.A.
Copyright Year	1998
Description	Author affiliation: Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA (Iliadis, A.A.)
Abstract	This work deals with the development of high temperature, low resistance ohmic metallizations to p-type 6H-SiC, using a novel approach of focused ion beam (FIB) surface modification and in-situ direct-write metal deposition for ohmic contact formation without annealing. FIB (Ga) surface modification and in-situ deposition of Pt, Mo and W showed minimum contact resistance values of 1.3/spl times/10/sup -4/ Ohm cm/sup 2/ to 7.3/spl times/10/sup -3/ Ohm cm/sup 2/, depending on metal and FIB conditions. These contact resistance values of the direct FIB deposited nonannealed contacts compare well with reported values for conventionally deposited and annealed contacts to SiC. Ex-situ E-beam deposition of Pt on FIB surface-modified and unmodified areas showed a substantial increase (one order of magnitude) in the contact resistance values of the unmodified contacts.
Starting Page	353
Ending Page	357
File Size	361825
Page Count	5
File Format	PDF
ISBN	0750305568
DOI	10.1109/ISCS.1998.711653
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion beams Metallization Surface resistance Contact resistance Silicon carbide Ohmic contacts Annealing Educational institutions Temperature Doping
Content Type	Text
Resource Type	Article

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