NDLI: Structural, thermal and electrical properties of plasma deposited a-C:F films

Content Provider	IEEE Xplore Digital Library
Author	Zhenyu Wu Yintang Yang Jiayou Wang
Copyright Year	2005
Description	Author affiliation: Key Lab of Ministry of Education for Band-Gap Semiconductor materials and Devices, Institute of Microelectronics, Xidian University, No.2, South Taibai road, Xi'an, 710071,P.R. China, Tel: +86-29-88202507, E-mail address: wuzhenyu@xidian.edu.cn (Zhenyu Wu)
Abstract	Flurinated amorphous carbon (a-C:F) films were deposited at room temperature using Cand CHas precursor gases by electron cyclotron resonance chemical vapour deposition (ECR-CVD). Chemical compositions and bond structures were investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). CF=C $(1680cm^{-1}),$ as well as CF=CF $(1780cm^{-1})$ that acted as termination groups of the cross-linking film structure were identified in the deposited a-C:F films. C 1s peaks were assigned to CF(295eV), CF(293eV), CF(291eV), C-O(289eV), C-CF(x=1∼3) (287eV) and C-C termination bond(285eV), respectively. The CFand C-C termination bonds were thermally liable and could induce reduction of film thickness after heat treatment through out-gassing effect. The thermal stability of a-C:F films improved with increasing cross-linking C-CFbonds and decreasing CFand C-C termination bonds. The dissipation factor of the as-deposited metal-insulator-semiconductor capacitor (MIS-C) was approximately 0.07 at 1MHz. The dielectric constant of a-C:F films increased after heat treatment due to reduced electronic polarization and enhanced film density. The interface trap density decreased from (5∼9) $×10^{11}eV^{-1}cm^{-2}to$ (4∼6) $×10^{11}eV^{-1}cm^{-2}after$ 300°C annealing in a nitrogen environment. The current-voltage characteristics for a-C:F films was explained using ohmic conduction at low fields and Poole-Frankel(PF) conduction mechanism at high fields. The trap energy of the traps at band tails formed by the delocalized π electrons decreased after annealing, which led to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.
Starting Page	210
Ending Page	214
File Size	1605627
Page Count	5
File Format	PDF
ISBN	0780395530
DOI	10.1109/POLYTR.2005.1596521
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-23
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma properties Bonding Electron traps Plasma temperature Chemicals Infrared spectra Spectroscopy Heat treatment Annealing Plasma chemistry Electrical properties a-C:F Chemical vapor deposition Bond structure Thermal stability
Content Type	Text
Resource Type	Article

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