NDLI: Strong atmospheric stability of carbon nanotubes under high temperature annealing

Content Provider	IEEE Xplore Digital Library
Author	Han Eol Lim Je Hwang Ryu Byung Taek Son Hye Mi Oh Na Young Bae Jin Jang Jong Hyun Moon Nakamoto, M. Kyu Chang Park
Copyright Year	2009
Description	Author affiliation: Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea (Han Eol Lim; Je Hwang Ryu; Byung Taek Son; Hye Mi Oh; Na Young Bae; Jin Jang; Kyu Chang Park) \|\| Research Institute of Electronics, Shizuoka University, Shizuoka, Japan (Jong Hyun Moon; Nakamoto, M.)
Abstract	The stability of electron emission current and structural robustness of carbon nanotubes (CNTs) have been studied by many laboratories. However, atmospheric air environmental stability of CNTs were not much studied, especially, high temperature atmospheric air environmental stability of CNTs is little studied because CNTs can be easily burned out in high temperature ambient air annealing [1]. For example, single walled CNTs start to be burned at less than 400 °C and the oxidation of carbon nanotubes in air for short duration above about 700 °C results in etching away of tube caps and the thinning of tubes through layer-by-layer peeling of the outer layers, starting from the cap region [1]. However, the burning temperature can be improved with process condition and structural modification of the CNTs. To apply CNTs as stable electron emitters in environmentally harsh ambient, environmental stress test should be done. In this study we compared electron emission current and atmospheric stability of CNTs grown plasma enhanced chemical vapor deposition. Three types of multi walled CNTs were grown with a conventional method (Type I), resist-assisted patterning (Type II, RAP), and robust (Type III) method. Previous works explained the detail process flow and characteristics of RAP [2] and robust CNTs [3]. For environmental stability measurements, these samples were annealed in 700 °C furnace and/or rapid thermal annealing system under ambient environment. The annealing time is increased up to 10 hr.
Starting Page	23
Ending Page	24
File Size	447187
Page Count	2
File Format	PDF
ISBN	9781424435876
DOI	10.1109/IVNC.2009.5271625
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-20
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carbon nanotubes Rapid thermal annealing Plasma temperature Electron emission Plasma stability Plasma measurements Robustness Plasma chemistry Chemical vapor deposition Thermal stability
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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