NDLI: Field emission investigation of boron doped diamond thin films synthesized by microwave plasma chemical vapor deposition: Effect of vacuum annealing

Content Provider	IEEE Xplore Digital Library
Author	Koinkar, P.M. Yonekura, D. Kim, T.G. More, M.A. Murakami, R.
Copyright Year	2009
Description	Author affiliation: Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune-41007, India (More, M.A.) \|\| Center for International Cooperation in Engineering Education (CICEE), The University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506, Japan (Koinkar, P.M.) \|\| Department of Nano System and Process, Engineering, Pusan National University, 50 Chengnak-ri, Sam nangiin-eup, Mirang, Gyeongnam, Pusan 627-706, Korea (Kim, T.G.) \|\| Department of Mechanical Engineering, The University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506, Japan (Yonekura, D.; Murakami, R.)
Abstract	Boron-doped nanodiamond (NCD) films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of vacuum annealing on the field emission characteristics of NCD films has been investigated. The surface morphology and quality of films was characterized by scanning electron microscope (SEM) and Raman spectroscopy. The SEM images clearly reveal formation of nanocrystalline diamond (NCD) on the entire substrate surface. The Raman spectra of the as-synthesized films and films annealed at different temperatures in vacuum showed the characteristics peaks at ~1140, 1350 and 1480 $cm^{-1}$ confirming the nanocrystalline nature of the diamond crystallites. The field emission properties of NCD films were enhanced by the rapid annealing process. The threshold fields of thermal treated boron doped NCD film are observed to be low as compared to as grown. The enhanced field emission properties may be attributed to the atomic defects created due to annealing, which play active role in the emission mechanism.
Starting Page	247
Ending Page	248
File Size	371395
Page Count	2
File Format	PDF
ISBN	9781424435876
DOI	10.1109/IVNC.2009.5271662
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-20
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boron Sputtering Plasma chemistry Chemical vapor deposition Scanning electron microscopy Rapid thermal annealing Plasma properties Substrates Surface morphology Semiconductor films
Content Type	Text
Resource Type	Article

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