NDLI: Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition (MEPIIID) on a Sharp Cone and a Fine Tip

Content Provider	IEEE Xplore Digital Library
Author	Kwok, D.T.K. Cornet, C.
Copyright Year	2005
Description	Author affiliation: Sch. of Phys., Sydney Univ., NSW (Kwok, D.T.K.; Cornet, C.)
Abstract	Summary form only given. Previously, a two dimensional particle-in-cell simulation in r-z cylindrical coordinates was used to model metal plasma-immersion ion implantation and deposition (MePIIID) on a cone. It showed that a sharp cone mounted on a plane or stage exhibits an ion focusing effect. This focusing effect was due to the shape of the equilibrium sheath and is strongly enhanced by sharper cones. The focusing effect increased for sharper cones and the ion trajectories bent more sharply. The ion dose showed a sharp decrease near the cone tip. However, the tip of the cone was described by only one single point. The electric field of this point was approximately calculated by first order finite difference. In our earlier work, we could not determine whether the sharp decrease in dose was an artifact or real. We can now resolve this problem, by applying a multiple-grid method to numerically simulate the MePIIID on a sharp cone and a fine tip. A multiple-grid system with three different sizes of cells, 2 mm, 1 mm, and 0.5 mm is used in the simulation. The tip of the cone is represented by a sphere, of variable radius, in tangential contact with the edge of the cone. It shows that the highest dose located the center of the tip and we conclude that the sharp decrease in dose in our previous work was an artifact of the single point
Sponsorship	Plasma Sci. Appl. Comm. IEEE Nucl. Plasma Sci. Soc.
Starting Page	226
Ending Page	226
File Size	1124670
Page Count	1
File Format	PDF
ISBN	0780393007
ISSN	07309244
DOI	10.1109/PLASMA.2005.359280
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Numerical simulation Plasma immersion ion implantation Electrodes Surface charging Conducting materials Physics Ion beams Mesh generation Voltage Surface treatment
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Numerical Simulation of Metal Plasma Immersion Ion Implantation (MePIIID) on a Sharp Cone and a Fine Tip by a Multiple-Grid Particle-in-Cell (PIC) Method

Analysis of Ion Beam Generated from Sheath Field of Grid Electrode and Its Application

Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition on a Dielectric Wedge

Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Simulation of temperature distribution on a spherical target during plasma immersion ion implantation

Implantation dynamics of plasma immersion ion implantation into non-conductive materials and applications

Charging of substrates irradiated by particle beams

Steady state direct current plasma immersion ion implantation (PIII) using a grounded conducting grid

Optimization of two-dimensional grid electrode geometry for ballistic-mode plasma immersion ion implantation

Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition (MEPIIID) on a Sharp Cone and a Fine Tip

Similar Documents

Numerical Simulation of Metal Plasma Immersion Ion Implantation (MePIIID) on a Sharp Cone and a Fine Tip by a Multiple-Grid Particle-in-Cell (PIC) Method

Analysis of Ion Beam Generated from Sheath Field of Grid Electrode and Its Application

Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition on a Dielectric Wedge

Numerical simulation of plasma sheath of non-uniformly biased target in plasma ion implantation

Simulation of temperature distribution on a spherical target during plasma immersion ion implantation

Implantation dynamics of plasma immersion ion implantation into non-conductive materials and applications

Charging of substrates irradiated by particle beams

Steady state direct current plasma immersion ion implantation (PIII) using a grounded conducting grid

Optimization of two-dimensional grid electrode geometry for ballistic-mode plasma immersion ion implantation

Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition (MEPIIID) on a Sharp Cone and a Fine Tip