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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ishikawa, Y. Nishioka, K. Yamamoto, Y. Uraoka, Y. Fuyuki, T. |
| Copyright Year | 2002 |
| Description | Author affiliation: Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan (Ishikawa, Y.; Nishioka, K.; Yamamoto, Y.; Uraoka, Y.; Fuyuki, T.) |
| Abstract | Thin film poly-Si solar cell grown by atmospheric pressure chemical vapor deposition (APCVD) has been fabricated. In order to realize excellent crystallinity poly-Si thin films, two-step deposition method was carried out. The poly-Si film with very high preferential orientation to (220) was obtained with a film thickness of 10 /spl mu/m and grain size of 3 /spl mu/m. Due to high temperature annealing effect, /spl mu/c-Si phase which existed at grain boundaries was disappeared completely. For fabricated thin film poly-Si solar cells, electrical properties were evaluated. Relatively high Jsc of 16.74 mA/cm/sup 2/ was obtained. Factors to promote the properties further were discussed. Results obtained in this work suggest the possibility of realization of high performance thin film poly-Si solar cells. |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 1294 |
| Ending Page | 1297 |
| File Size | 262451 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780374711 |
| ISSN | 10608371 |
| DOI | 10.1109/PVSC.2002.1190846 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-05-19 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sputtering Photovoltaic cells Temperature Transistors Semiconductor films Crystallization Grain size Grain boundaries Annealing Materials science and technology |
| Content Type | Text |
| Resource Type | Article |
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