NDLI: Radiation hard and gravimetric efficient thin film InP solar cells

Content Provider	IEEE Xplore Digital Library
Author	Yanning Sun Woodall, J.M. Freeout, J.L. Walters, R.J.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA (Yanning Sun; Woodall, J.M.)
Abstract	We present characterization results of advanced prototypes of InP based thin film solar cells designed to be gravimetrically efficient (high power to weight ratio), and radiation hardened, especially with respect to operations in orbits flie in the "van Allen Belt", i.e. at an altitude of 3200km, where the radiation is extremely intense. Our specially designed cells help achieve high radiation resistance by collecting photogenerated carriers by drift due to the electrical fields rather than by usual carrier diffusion associated with normal p-n junction solar cells. High-energy particle irradiation damage to this thin film InP cells has been studied. The result shows that the short circuit current is not affected by high fluence of 1-MeV proton irradiation.
Sponsorship	IEEE Electron Devices Soc
Starting Page	994
Ending Page	997
File Size	235607
Page Count	4
File Format	PDF
ISBN	0780374711
ISSN	10608371
DOI	10.1109/PVSC.2002.1190772
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Indium phosphide Photovoltaic cells Prototypes Radiation hardening Orbits Belts Electric resistance P-n junctions Thin film circuits
Content Type	Text
Resource Type	Article

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