NDLI: Low intensity low temperature performance of advanced solar cells

Content Provider	IEEE Xplore Digital Library
Author	Gelderloos, C.J. Miller, K.B. Walters, R.J. Summers, G.P. Messenger, S.R.
Copyright Year	2002
Description	Author affiliation: Ball Aerosp. & Technol. Corp, Boulder, CO, USA (Gelderloos, C.J.; Miller, K.B.)
Abstract	Renewed interest in the use of photovoltaics for deep space applications has spurred the development of silicon cells designed for low intensity low temperature (LILT) operations. It also raises questions about the performance of existing multi-junction GaInP/sub 2//GaAs/Ge cells. Previous tests have indicated that multi-junction cells exhibit typical LILT degradation features. However, the latest triple-junction cells had not been tested. Performance data are particularly relevant for proposed operations in high-radiation environments (e.g. Jupiter orbiters), where little previous data exist. Results are presented showing the performance of several cell technologies under unirradiated and irradiated conditions at a series of temperatures and intensities. While some general trends hold among similar products, significant differences are observed between the various manufacturers.
Sponsorship	IEEE Electron Devices Soc
Starting Page	804
Ending Page	807
File Size	288428
Page Count	4
File Format	PDF
ISBN	0780374711
ISSN	10608371
DOI	10.1109/PVSC.2002.1190695
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Space technology Testing Silicon Jupiter Space missions Temperature measurement Laboratories Degradation Manufacturing
Content Type	Text
Resource Type	Article

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