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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Menezes, S. |
| Copyright Year | 2002 |
| Description | Author affiliation: InterPhases Res., Thousand Oaks, CA, USA (Menezes, S.) |
| Abstract | CuInSe/sub 2/ (CIS) based thin-film devices could potentially provide high specific power for terrestrial or space power if they were fabricated at low temperatures on low-density polymer substrates. This paper presents a molecular level electrochemical approach that may permit direct deposition of morphologically homogenous, stoichiometric CIS-alloy absorber layers without high temperature post treatments. The paper investigates the effects of deposition parameters by monitoring voltammetric characteristics, pulsed flow/deposition waveforms and film composition with different deposition system configurations. It distinguishes the CIS formation reaction mechanisms in bulk and thin layer electrolytes and identifies two new deposition parameters to increase the content of difficult-to-electrodeposit metals like In and Ga. The results provide directions for low-temperature synthesis of device quality absorber layers for efficient, inexpensive PV modules. |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 660 |
| Ending Page | 663 |
| File Size | 275243 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780374711 |
| ISSN | 10608371 |
| DOI | 10.1109/PVSC.2002.1190651 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-05-19 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Computational Intelligence Society Chemicals Maximum likelihood estimation Temperature Substrates Polymer films Thin film devices Epitaxial growth Condition monitoring Production |
| Content Type | Text |
| Resource Type | Article |
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