NDLI: Light-induced lifetime degradation of commercial multicrystalline silicon wafers

Content Provider	IEEE Xplore Digital Library
Author	Dhamrin, M. Akihide, T. Hashigami, H. Saitoh, T.
Copyright Year	2002
Description	Author affiliation: Tokyo Univ. of Agric. & Technol., Japan (Dhamrin, M.; Akihide, T.; Hashigami, H.; Saitoh, T.)
Abstract	Light-induced lifetime degradation of conventional cast (CAST), electromagnetic cast (EMC) and heat exchanger method (HEM) multicrystalline silicon wafers have been extensively studied. Results show that samples with lower resistivities have high normalized defect concentration compared to samples with higher resistivities due to their higher boron concentrations. Gettered samples with higher lifetimes degrade more rapidly from their initial values within the first 30 min. The normalized defect concentration has been improved by a factor of 2 indicating the effect of P-diffusion and hydrogen passivation. It is clear that the carrier lifetimes of boron-doped EMC, HEM and CAST silicon wafers degrade as CZ silicon wafers. However, EMC and cast fabricated solar cells show a slight degradation of I/sub sc/, V/sub /spl prop// and efficiencies compared to wafer lifetime degradation. The degree of lifetime degradation depends on boron content and crystal quality suggesting the boron-oxygen complex model as a mechanism for lifetime degradation.
Sponsorship	IEEE Electron Devices Soc
Starting Page	395
Ending Page	398
File Size	269179
Page Count	4
File Format	PDF
ISBN	0780374711
ISSN	10608371
DOI	10.1109/PVSC.2002.1190542
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Silicon Electromagnetic compatibility Conductivity Boron Electromagnetic heating Hydrogen Passivation Charge carrier lifetime Photovoltaic cells
Content Type	Text
Resource Type	Article

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