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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | JaeSung You Jinmo Kang Donghwan Kim Pak, J.J. Choon Sik Kang |
| Copyright Year | 2002 |
| Description | Author affiliation: Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea (JaeSung You) |
| Abstract | Cu metallization for crystalline Si solar cells was investigated with the diffusion barrier of either Ti or Ti/TiN. The resistivity and specific contact resistance change of both Ti(30 nm)/Cu(100 nm) and Ti(30 nm)/TiN(30 nm)/Cu (100 nm) layers for various annealing temperatures were investigated. As the annealing temperature increased, the efficiency of cells increased mainly due to the increase in FF and I/sub SC/, which correlates with R/sub S/ of the metal layer. The fabricated solar cells with Ti/TiN/Cu layer generally showed higher efficiencies than those with Ti/Cu, because in Ti/Cu layer Cu diffused through Ti and acted as the deep trap centers in Si and increased R/sub S/. |
| Sponsorship | IEEE Electron Devices Soc |
| Starting Page | 277 |
| Ending Page | 280 |
| File Size | 302134 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780374711 |
| ISSN | 10608371 |
| DOI | 10.1109/PVSC.2002.1190512 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-05-19 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Metallization Crystallization Photovoltaic cells Conductivity Annealing Temperature Tin Electric resistance Sputter etching Wet etching |
| Content Type | Text |
| Resource Type | Article |
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