NDLI: Development of a high efficiency metamorphic triple-junction 2.1 eV/1.6 eV/1.2 eV AlGaInP/InGaAsP/InGaAs space solar cell

Content Provider	IEEE Xplore Digital Library
Author	Patton, M.O. Sinharoy, S. Weizer, V.G. Scheiman, D.A.
Copyright Year	2002
Description	Author affiliation: Essential Res. Inc., Cleveland, OH, USA (Patton, M.O.; Sinharoy, S.; Weizer, V.G.)
Abstract	We report our progress in the development of a high efficiency metamorphic triple-junction tandem solar cell that is predicted, on the basis of modeling calculations, to have a maximum practical room temperature air mass zero one-sun (AM01S) efficiency of 31.5%, and an efficiency of 36.5% under 100 suns. Cell structures are grown using the metal organic vapor phase epitaxy (MOVPE) process. Although the three cells are lattice-matched to each other, the bottom InGaAs cell is grown on a lattice-mismatched GaAs substrate using a proprietary buffer layer. This unique buffer layer pins most defects in the vicinity of the substrate-buffer interface, allowing the growth of nearly defect-free subsequent layers.
Sponsorship	IEEE Electron Devices Soc
Starting Page	1027
Ending Page	1030
File Size	271615
Page Count	4
File Format	PDF
ISBN	0780374711
ISSN	10608371
DOI	10.1109/PVSC.2002.1190780
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Photovoltaic cells Epitaxial growth Buffer layers Semiconductor process modeling Predictive models Temperature Sun Epitaxial layers Gallium arsenide
Content Type	Text
Resource Type	Article

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