NDLI: Inverse magnetoresistance in magnetic tunnel junction with an Fe/sub 3/O/sub 4/ electrode

Content Provider	IEEE Xplore Digital Library
Author	Park, C. Jian-Gang Zhu Peng, Y. Laughlin, D.E. White, R.M.
Copyright Year	2005
Description	Author affiliation: Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA (Park, C.; Jian-Gang Zhu)
Abstract	This study shows inverse MR in a NiFe/AlOx/ Fe/sub 3/O/sub 4/ tunnel junction if sufficiently pure Fe/sub 3/O/sub 4/ at the interface with the tunnel barrier can be achieved. Magnetic tunnel junction with the structure of Ta 3 nm/Cu 50 nm/Ta 3 nm/NiFe 10 nm/AlOx 2 nm/Fe (1.8 /spl sim/ 10 nm)-oxidation/Fe 5 nm/Ta 3 nm is deposited on oxidized silicon substrates by using an RF/DC sputtering system. Oxidation of the Fe layer is found to result to an inverse MR. As the unoxidized Fe layer decreases, MR also decreases until it reaches zero, that is, the unoxidized residual Fe phase coexist with the Fe/sub 3/O/sub 4/ phase. As the thickness decrease further to 1.8 nm, the MR curve becomes negative (inverse MR).
Sponsorship	Magnetics Soc. of Japan Magnetics Soc. of the IEEE
Starting Page	2001
Ending Page	2008
File Size	233315
Page Count	8
File Format	PDF
ISBN	0780390091
DOI	10.1109/INTMAG.2005.1464442
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance Magnetic tunneling Iron Electrodes Oxidation Thickness measurement Magnetic materials Electrons Optical polarization Plasma measurements
Content Type	Text
Resource Type	Article

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