NDLI: Modeling exchange bias in thin films and nanostructures

Content Provider	IEEE Xplore Digital Library
Author	Nowak, U. Beckmann, B. Scholten, G. Usadel, K.D.
Copyright Year	2005
Description	Author affiliation: Fachbereich Physik, Duisburg-Essen Univ., Duisburg, Germany (Nowak, U.; Beckmann, B.; Scholten, G.; Usadel, K.D.)
Abstract	We report on results obtained with a mean-field type calculation for an exchange bias (EB) system consisting of a ferromagnetic (FM) monolayer in contact with an antiferromagnetic (AFM) thin film. Both the bias field H/sub eb/ and the coercivity H/sub c/ are calculated. The AFM layer is magnetically diluted and different degrees of dilution ranging from zero to 50% are considered. The results obtained for the bias fields are in qualitative agreement with those obtained previously with Monte Carlo simulations. For the coercivity H/sub c/ we find in agreement with experiments a strong maximum around the blocking temperature where H/sub eb/ vanishes. This maximum is also present for zero dilution of the AFM for which the EB field must vanish, since we are considering ideal compensated interfaces. We also study the EB of a system consisting of FM nanodots in contact with an AFM film systematically, showing the decreasing influence of the domains in the AFM layer as the lateral size of the FM dots are below the average size of the AFM domains.
Sponsorship	Magnetics Soc. of Japan Magnetics Soc. of the IEEE
Starting Page	165
Ending Page	166
File Size	184401
Page Count	2
File Format	PDF
ISBN	0780390091
DOI	10.1109/INTMAG.2005.1463511
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Coercive force Hysteresis Atomic force microscopy Physics Anisotropic magnetoresistance Erbium Fluctuations Cooling
Content Type	Text
Resource Type	Article

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