NDLI: Effect of capping layer material on tunnel magnetoresistance in CoFeB-MgO-CoFeB magnetic tunnel junctions

Content Provider	IEEE Xplore Digital Library
Author	Tsumekawa, K. Djayaprawira, D.D. Nagai, M. Maehara, H. Yamagata, S. Watanabe, N.
Copyright Year	2005
Description	Author affiliation: ANELVA Corp., Tokyo, Japan (Tsumekawa, K.; Djayaprawira, D.D.; Nagai, M.; Maehara, H.; Yamagata, S.; Watanabe, N.)
Abstract	The effect of capping layer (CL) material on tunnel magnetoresistance (TMR) and magnetic properties in CoFeB/MgO/CoFeB magnetic tunnel junctions has been studied. The use of CL materials such as Ta, Ru, PtMn, Mg and IrMn yielded high MR ratio of more than 100%. The use of ferromagnetic materials, on the other hand, such as NiFe, CoFe or Fe decreased the MR ratio, as well as using Al, Cu, NiFeCr or Ir. The dependence of coercivity on CL materials for the same samples are also studied. It was speculated from the results that the degradation of the TMR and the magnetic properties when particular capping layer materials were used, is due to the formation of a reactive layer between the free layer and the capping layer.
Sponsorship	Magnetics Soc. of Japan Magnetics Soc. of the IEEE
Starting Page	1983
Ending Page	1984
File Size	177846
Page Count	2
File Format	PDF
ISBN	0780390091
DOI	10.1109/INTMAG.2005.1464430
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-04-04
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic materials Tunneling magnetoresistance Magnetic tunneling Antiferromagnetic materials Degradation Soft magnetic materials Magnetic properties Lamination Iron Artificial intelligence
Content Type	Text
Resource Type	Article

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Enhancement of tunneling magnetoresistance by optimization of capping layer thicknesses in CoFeB/MgO/CoFeB magnetic tunnel junctions

Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers

Effect of Buffer Layer Texture on the Crystallization of CoFeB and on the Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions

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Effect Of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction

Use of Half Metallic Heusler Alloys in CoFeB/MgO/Heusler Alloy Tunnel Junctions

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