NDLI: The performance of two purification media in their removal of impurities from inert gases

Content Provider	IEEE Xplore Digital Library
Author	Jian Wei Kondrashov, D. Vakhshoori, K. Colorado, A.
Copyright Year	1999
Description	Author affiliation: Microelectron. Div., Millipore Corp., Allen, TX, USA (Jian Wei)
Abstract	Ultra-high-purity (UHP) inert gases such as N/sub 2/ and Ar are utilized in the semiconductor industry as purge and carrier gases for IC manufacturing processes. High quality product production is extremely dependent on process gas purity at the point-of-use (POU). Removal of impurities such as moisture, O/sub 2/, CO/sub 2/, and CO is highly critical at the POU due to the detrimental effects of these chemicals on the final product. The ramifications of a poorly purified gas are particle generation due to corrosion from moisture reacting with specialty gases and poor film growth due to the impregnation of impurities such as O/sub 2/ in film growth processes. There are a variety of POU purifiers that remove impurities based on different chemistries. With one type of purifier based on metallized Ni pellets, impurities are removed from the gas via multiple chemical pathways, e.g. chemisorption, oxidative and absorption processes. Another purification medium utilizes reactive micro matrices (RMMs), which remove impurities based strictly on chemisorption. In this paper, experimental results from evaluating these two purifiers are presented. Overall purifier performance and cleanliness were determined by analysis of downstream cleanliness using APIMS and particle shed testing. Also, safety aspects of accidental exposure of these purifiers to compressed air are examined. In general, results show the RMM-based purifier performed better overall. Initial installation of the RMM-based purifier showed an initial moisture spike four times lower than the Ni-based purifier. The Ni purifier also released undesirable nickel carbonyls under CO removal.
Starting Page	370
Ending Page	377
File Size	430344
Page Count	8
File Format	PDF
ISBN	0780355024
ISSN	10898190
DOI	10.1109/IEMT.1999.804848
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-10-19
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Purification Gases Moisture Nickel Argon Electronics industry Manufacturing processes Production Semiconductor impurities Chemical products
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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