NDLI: The diffusion of Ni into Al wire at the interface of ultrasonic wire bond during high temperature storage

Content Provider	IEEE Xplore Digital Library
Author	Hongjun Ji Mingyu Li Au Tai Kung Chunqing Wang Dongqing Li
Copyright Year	2005
Description	Author affiliation: Sch. of Mater. Sci. & Eng., Harbin Inst. of Technol., China (Hongjun Ji)
Abstract	Ultrasonic wire bonding is one of the most important techniques for die interconnection in microelectronic packaging. It is widely used for power devices, microwave devices and photoelectron devices packaging. At room temperature, ultrasonic energy and plastic deformation energy, generated by metal wire plastic deformation under the wedge tool pressure, make the wire and metallization join together. The ultrasonic bonds, after bonding and aging, of Al+1%Si wire with 25/spl mu/m diameter bonded on the Au/Ni/Cu pad, are analyzed by scanning electronic microscopy (SEM) with energy dispersive x-ray spectrometer (EDX). The joints begin at the bond periphery where it is the location of the greatest plastic flow. It is found that the mechanism of ultrasonic bonding is, both the plastic flow of metal wire generated by wedge tool pressure which results in the diffusion of Ni into Al wire; and the effect of ultrasound is that, on the one hand, ultrasonic vibration enhances the metal wire ability of plastic flow and, on the other hand, it generates many defects inside the metal wire which are the fast diffusion channels. The diffusion type is likely the short-circuit diffusion, which is more prominent than the crystal diffusion when the temperature is low. After high temperature storage at 170 /spl deg/C for 10 days, there is evident diffusion of Ni into Al wire, but the microstructure is the same with the bonds after bonding, there is no evident change. Aged for 30 days, the bond interface forms a cloud-like structure, and the major composition is Al and Ni with weight percent of 78.82% and 15.55% respectively. However, the diffusion is not even and some parts of the bond interface are absence of Ni diffusion. When the aging time is 40 days, the cloud-like structure transforms into rectangular island-like structure and there are many cavities inside the bond wire, which are different from the Kirkendall voids because of the shape and dimension.
Starting Page	377
Ending Page	381
File Size	696220
Page Count	5
File Format	PDF
ISBN	0780394496
DOI	10.1109/ICEPT.2005.1564652
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-08-30
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wire Diffusion bonding Temperature Plastics Aging Packaging Scanning electron microscopy Microelectronics Microwave devices High power microwave generation
Content Type	Text
Resource Type	Article

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Metallurgical Behavior of Au/Al Bond Interface during High Temperature Storage of Ultrasonic Wedge Bonding

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