NDLI: Development of Nickel Wire Bonding for High-Temperature Packaging of SiC Devices

Content Provider	IEEE Xplore Digital Library
Author	Burla, R.K. Li Chen Zorman, C.A. Mehregany, M.
Copyright Year	1999
Abstract	This paper describes a detailed investigation of an ultrasonic nickel wire bonding technique for silicon carbide (SiC) devices, and its comparison with a thermosonic wire bonding process, for high-temperature applications. The study focuses on bonding 25-mum-diameter Ni wires to 750-nm-thick Ni pads deposited on 3C-SiC substrates. First, the Ni wire bonding recipe is optimized for maximum bond strength using a response surface methodology (RSM) statistical approach. Maximum pull strengths as high as 13.1 gram force (gf) are achieved, far surpassing the military specifications for conventional Au (3.0 gf) and Al (2.5 gf) wire bonds. Scanning electron microscopy (SEM) and electron dispersive spectroscopy (EDS) are used to characterize crack defects on the heel of the bonded wires and verify the absence of cratering. Pull strength and electrical performance of the Ni wire bonds are studied up to 550degC. The utility of Ni wire bonding to Ni pads for wire bonding prior to chemical release of SiC micromechanical devices in KOH and HF is demonstrated. Demonstration of use of Ni wire bonding with Ni pads in a SiC-based chemical sensor and a poly-SiC lateral resonant device is provided, up to 280degC operation for the former and 950degC the latter. Such devices are for example of interest in combustion-related sensor instrumentation.
Sponsorship	IEEE Components, Packaging, and Manufacturing Technology Society IEEE Components, Packaging and Manufacturing Technology Society
Starting Page	564
Ending Page	574
Page Count	11
File Size	3700224
File Format	PDF
ISSN	15213323
Volume Number	32
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nickel Wire Packaging Silicon carbide Scanning electron microscopy Chemical sensors Bonding processes Optimization methods Response surface methodology Surface cracks wire bonding Harsh environment high temperature microelectromechanical systems (MEMS) nickel packaging SiC
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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