NDLI: Analysis of laser CVD SiN-Si system TFD characteristics by DLTS

Content Provider	IEEE Xplore Digital Library
Author	Yung-Kwon Sung Yoon-Jong Huh Sang-yung Kim Ji-Ho Ryoo
Copyright Year	1994
Description	Author affiliation: Dept. of Electr. Eng., Korea Univ., Seoul, South Korea (Yung-Kwon Sung; Yoon-Jong Huh; Sang-yung Kim; Ji-Ho Ryoo)
Abstract	SiN-Si TFD (thin film diode) was fabricated by photo-chemically depositing SiN films on Si substrate by ArF excimer laser CVD and depositing Al electrodes on SiN films by evaporation. SiN films were deposited from SiH/sub 4/ (95% SiH/sub 4/+5% Ar), NH/sub 3/ (99.99%) gas mixture with N/sub 2/ carrier gas. The substrate temperatures and chamber pressures were varied to investigate the properties of SiN film and their effects on TFD characteristics. And the optimum condition for SiN deposition was achieved. Deposition rate and refractive index of SiN film showed a strong dependence on substrate temperature. This result is in accordance with the FT-IR analysis which apparently showed the dependence of N-H, Si-H and Si-N bonding strength on substrate temperature. High frequency C-V curve showed slight hysteresis and interface state density N/sub ss/ obtained from DLTS signals with different DLTS timings (T/sub D/, T/sub P/, T/sub S/) decreased with increasing substrate temperature and a increased slightly with increasing chamber pressure.<>
Starting Page	640
Ending Page	643
File Size	348123
Page Count	4
File Format	PDF
ISBN	0780309146
DOI	10.1109/ECTC.1994.367604
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-05-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon compounds Substrates Semiconductor films Optical films Temperature dependence Semiconductor thin films Sputtering Diodes Gas lasers Electrodes
Content Type	Text
Resource Type	Article

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