NDLI: High mechanical reliability of background GaAs LSI chips with low thermal resistance

Content Provider	IEEE Xplore Digital Library
Author	Nishiguchi, M. Miki, A. Goto, N. Fujihira, M. Nishizawa, H.
Copyright Year	1991
Description	Author affiliation: Sumitomo Electr. Ind. Ltd., Yokohama, Japan (Nishiguchi, M.; Miki, A.; Goto, N.; Fujihira, M.; Nishizawa, H.)
Abstract	The fracture strength of mechanically ground GaAs LSI chips was investigated in comparison to that of chemically thinned ones to confirm their appropriateness for practical use in the GaAs LSI manufacturing process. In addition, the effect of wafer-thinning on thermal resistance was evaluated quantitatively. GaAs LSI-sized 6.35-mm-square chips with mirror-ground back-surfaces (R/sub max/=0.1 mu m) have been confirmed to be almost as highly reliable as chemically thinned ones through fracture stress experiments. The 1 mu m post-grinding chemical etching in the original wafer-thinning technology proved to be effective for eliminating the surface flaws due to grinding, which act as stress concentrators and reduce mechanical strength. The thermal resistance of background 5-mm-square GaAs chips was observed to be expectedly low utilizing the newly established surface temperature measurement technology based on the diode drop technique. Furthermore, the thermal resistance was judged to be independent of the back-surface treatment.<>
Starting Page	890
Ending Page	896
File Size	606847
Page Count	7
File Format	PDF
ISBN	0780300122
DOI	10.1109/ECTC.1991.163984
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Large scale integration Thermal resistance Chemical technology Surface resistance Thermal stresses Chemical processes Manufacturing processes Etching Surface cracks
Content Type	Text
Resource Type	Article

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