NDLI: Electrical properties induced by oxygen vacancies of CeO2 thin films grown onp-Si(100)

Content Provider	IEEE Xplore Digital Library
Author	Park, S.M. Song, S.H. Pak, J.M. Nam, K.W. Kim, H.J. Sin, J.H. Gwangseo Park
Copyright Year	2007
Description	Author affiliation: Sogang Univ., Seoul (Park, S.M.; Song, S.H.; Pak, J.M.; Nam, K.W.; Kim, H.J.; Sin, J.H.; Gwangseo Park)
Abstract	We have deposited $CeO_{2}$ thin films on p-Si(100) substrates to investigate their electrical properties originated from oxygen vacancies, using pulsed laser deposition(PLD) method. (111) preferential orientation was observed. Raman spectra revealed that a film deposited at 760deg C had the smallest distortion of the unit structure due to small quantities of oxygen vacancy. X-ray specular reflectivities were measured to investigate an electron density profile along the thickness. The profile was strongly correlated with oxygen vacancy because total net charges inside the dielectric film should be zero. As a result, oxide trapped-charge density rho(x) could be extracted from the electron-density profile. C-V curves depending on frequencies showed that and interface trapped-charge density is not high. Flat band voltage in C-V curves was slightly shifted because of the presence of oxide trapped charge. We will report on a decisive method calculating the shift of flat band voltage.
Starting Page	316
Ending Page	318
File Size	999870
Page Count	3
File Format	PDF
ISBN	9781424413331
ISSN	10994734
DOI	10.1109/ISAF.2007.4393252
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron traps Pulsed laser deposition Capacitance-voltage characteristics Voltage Sputtering Substrates Optical pulses Laser noise X-ray lasers Optical films
Content Type	Text
Resource Type	Article

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