NDLI: Low Temperature Preparation of Bismuth-Related Ferroelectrics by Hydrothermal Synthesis

Content Provider	IEEE Xplore Digital Library
Author	Inoue, A. Tho Truong Nguyen Noda, M. Okuyama, M.
Copyright Year	2007
Description	Author affiliation: Osaka Univ., Osaka (Inoue, A.; Tho Truong Nguyen; Noda, M.; Okuyama, M.)
Abstract	BIT powder is prepared by hydrothermal synthesis. It is found that the formation of BIT powder is affected by KOH concentration because the XRD intensity increases with increasing the KOH concentration less than 2.0 M. The products are yellowish gray and consist of microscopic lamellar platelets of 0.5 -1.5 mum. Treatment tempereatures are 160 -240 deg C and is decreased with increasing the holding time. The BIT thin films are prepared below 350 deg C by the sol-gel method and hydrothermal treatment for 3 h in $Bi(OH)_{3}$ 0.14 M and KOH 0.01 M mixture solution. The BIT thin film prepared under the optimized condition have hysteresis loops with a good squareness. When 5 V is applied to the BIT film, the polarization at zero electric field is 0.9 $muC/cm^{2}$ and current density is $8.1x10^{-6}$ $A/cm^{2}.$
Starting Page	136
Ending Page	137
File Size	1110219
Page Count	2
File Format	PDF
ISBN	9781424413331
ISSN	10994734
DOI	10.1109/ISAF.2007.4393193
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Ferroelectric materials Ferroelectric films Powders X-ray scattering Nonvolatile memory Random access memory Sputtering Transistors Integrated circuit technology
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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