NDLI: High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process

Content Provider	IEEE Xplore Digital Library
Author	Summerfelt, S.R. Moise, T.S. Udayakumar, K.R. Boku, K. Remack, K. Rodriguez, J. Gertas, J. McAdams, H. Madan, S. Eliason, J. Groat, J. Kim, D. Staubs, P. Depner, M. Bailey, R.
Copyright Year	2007
Description	Author affiliation: Texas Instrum. Inc., Dallas (Summerfelt, S.R.; Moise, T.S.; Udayakumar, K.R.; Boku, K.; Remack, K.; Rodriguez, J.; Gertas, J.; McAdams, H.)
Abstract	Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low number of additional masks for fabrication (+2). An embedded ferroelectric memory (FRAM) has been developed using a 1.5 V, 130 nm 5 metal layer Cu/FSG logic process. The only modification to the logic process was the addition of a ferroelectric process module consisting of two additional masks (FECAP, VIAO) immediately before MET1. The ferroelectric was 70 nm $Pb(Zr,Ti)O_{3}$ (PZT) deposited by metalorganic chemical vapor deposition (MOCVD). The electrical properties of a 8 Mb 1T-1C embedded FRAM were characterized. This eFRAM process has been used to simultaneously fabricate a digital signal processor (DSP) using the eFRAM process flow and the operating frequency is nearly the same relative to the CMOS baseline. This eFRAM process flow creates a technology platform that enables ultra-low-power devices.
Starting Page	9
Ending Page	10
File Size	1971039
Page Count	2
File Format	PDF
ISBN	9781424413331
ISSN	10994734
DOI	10.1109/ISAF.2007.4393151
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ferroelectric materials Random access memory Logic Nonvolatile memory Ferroelectric films Read-write memory EPROM Low voltage Fabrication Chemical vapor deposition
Content Type	Text
Resource Type	Article

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