NDLI: Atomic layer deposition of PbTiO3 and its component oxide films

Content Provider	IEEE Xplore Digital Library
Author	Hyun Ju Lee Gyu Weon Hwang Keun Lee Gun Hwan Kim Cheol Seong Hwang
Copyright Year	2007
Description	Author affiliation: Inter-Univ. Semicond. Res. Center, Seoul (Hyun Ju Lee; Gyu Weon Hwang; Keun Lee; Gun Hwan Kim; Cheol Seong Hwang)
Abstract	Atomic layer deposition of ferroelectric $PbTiO_{3}$ (PTO) thin films and its component oxide films were attempted using the $Pb(DMAMP)_{2}$ and $Ti(Oi-Pr)_{4}$ or $Ti(Ot-Bu)_{4},$ as the Pb-and Ti-precursors, respectively, and $H_{2}O$ as oxidant at a wafer temperature of 200 on $Ir/IrO_{2}/SiO_{2}/Si$ substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and $TiO_{2}$ cycles. The increase of the PTO film growth rate due to the cayalytic effect was observed compared to its component oxide films for both processes using $Ti(Oi-Pr)_{4}$ or $Ti(Ot-Bu)_{4}.$ The as-deposited PTO film was amorphous so that two different post-deposition annealing method, i.e. slow and fast furnace annealing at 600 , were used to crystallize PTO film. The higher growth rate of PTO film grown using $Ti(Oi-Pr)_{4}$ due to the higher growth rate of $TiO_{2}$ film compared to the case using $Ti(Ot-Bu)_{4}$ resulted in less dense PTO film with the higher density of micro-pores inside as well as surface of film after the fast furnace annealing. Slow furnace annealing improved the surface morphology of PTO film and reduced the micro-pore density. Post-deposition annealing transformed amorphous film to polycrystalline film of perovskite sturcure with an a-axis preferred crystallographic orientation.
Starting Page	152
Ending Page	155
File Size	3535454
Page Count	4
File Format	PDF
ISBN	9781424413331
ISSN	10994734
DOI	10.1109/ISAF.2007.4393198
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-27
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic layer deposition Annealing Furnaces Amorphous materials Surface morphology Ferroelectric materials Semiconductor thin films Sputtering Ferroelectric films Semiconductor films
Content Type	Text
Resource Type	Article

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