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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lichtenberger, A.W. Lea, D.M. Li, C. Lloyd, F.L. Feldman, M.J. Mattauch, R.J. Pan, S.-K. Kerr, A.R. |
| Copyright Year | 1965 |
| Abstract | A trilevel resist, consisting of polyimide planarization, SiO/sub 2/ barrier, and photoresist, was used to pattern junction areas in Nb/Al-Al/sub 2/O/sub 3//Nb trilayer films. After reactive ion etching to define the junction areas, the perimeter of the junction was revealed, and excellent liftoff structures were defined with an oxygen plasma shrink of the exposed polyimide sidewalls. A subsequently deposited insulation layer seals the sides and the top surface along the perimeter of the Nb counter electrode button. High-quality superconductor-insulator-superconductor (SIS) junctions with diameters as small as 1.2 mu m and V/sub m/ as large as 1500 mV at 2.0 K have been fabricated. An SIS receiver using these junctions with integrated tuning elements has a DSB noise temperature of 58 K at 230 GHz. This is believed to be the lowest receiver noise temperature ever reported at this frequency. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 3168 |
| Ending Page | 3171 |
| Page Count | 4 |
| File Size | 453677 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 27 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-03-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Niobium Superconducting device noise Resists Polyimides Plasma temperature Planarization Etching Plasma applications Insulation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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