NDLI: Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

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Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

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The Journal of Engineering

Performance investigation of a semi-junctionless type II heterojunction tunnel field effect transistor in nanoscale regime

Content Provider	IET Digital Library
Author	Ahangari, Zahra
Abstract	In this work, the electrical characteristics and impact of physical and structural parameters on the performance of a novel heterojunction GaAs0.1Sb0.9-InAs semi-junctionless tunnel field effect transistor (SJTFET) is demonstrated. Unlike the conventional p-i-n tunnel field effect transistor, the n-channel SJTFET is a p+-p+-n structure having similar doping profile for the source and channel regions. First, all the structural and physical parameters are set to their initial values, and then, one parameter is varied to investigate its variation effect on the performance of SJTFET. Standard deviation and mean value of subthreshold swing, off-state and on-state current manifests that the performance of SJTFET is more sensitive to the gate workfunction, source–channel doping density and gate oxide thickness, respectively, in comparison with other structural parameters. The two-dimensional variation matrix of off-state current, on-state current and threshold voltage is calculated as a function of gate workfunction and source–channel p+ doping density for determining an optimum value for the source–channel doping concentration and gate workfunction. Due to the n-p+ drain–channel junction, the tunnel barrier in the off-state mode can be increased into the drain region, providing low off-state current in the ultra-scaled device and makes this device become less sensitive to short channel effects.
Starting Page	1165
Ending Page	1169
Page Count	5
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 8, Aug (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0877
Journal	Micro & Nano Letters
Publisher Date	2018-08-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Design And Testing Doping Profile Doping Profiles Drain–channel Junction Equivalent Circuit Field Effect Device Field Effect Transistors GaAs0.1Sb0.9-InAs Gallium Arsenide Gate Oxide Thickness Gate Workfunction III-V SemiConductor Indium Compound N-channel SJTFET N-p+ Drain–channel Junction Off-state Current On-state Current Manifests P+-p+-n Structure Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Semiconductor Heterojunction Semiconductor Junction Semijunctionless Tunnel Field Effect Transistor Semijunctionless Type II Heterojunction Short Channel Effect Source–channel Doping Concentration Source–channel Doping Density Tunnel Barrier Tunnel Transistors
Content Type	Text
Resource Type	Article

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