NDLI: Dual metal drain Ge-source dopingless TFET with enhanced turn-ON steep subthreshold swing and high ON-current

Content Provider	IET Digital Library
Author	Sharma, N. Chauhan, S. S.
Abstract	A novel dopingless Ge-source dual metal drain double gate tunnel field effect transistor is presented with the help of work function engineering. Proposed device makes use of the dopingless concept, charge plasma for carrier doping concentration below the drain/source region that permits dynamic configuration by choosing suitable work function for drain/source metal electrode. In the proposed device, the n + drain region is divided into two parts of low and high work function. The work function of the metal nearest to the drain–channel junction is relatively higher than the other metal for creating a potential barrier for restricting the tunnelling of holes when the negative gate voltage is applied. By using low energy bandgap Ge material, the tunnelling probability and drive current of the device are increased. The proposed device offers high I ON/I OFF ratio (∼1013), smaller point subthreshold swing (SS) (∼31 mV/decade), average SS (∼43 mV/decade).
Starting Page	960
Ending Page	962
Page Count	3
ISSN	00135194
Volume Number	53
e-ISSN	1350911X
Issue Number	Issue 14, Jul (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/53/14
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.0157
Journal	Electronics Letters
Publisher Date	2017-06-13
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Carrier Doping Concentration Charge Plasma Device Drive Current Double-gate Tunnel Field Effect Transistor Drain-channel Junction Drain-source Metal Electrode Drain-source Region Dual Metal Drain Germanium-source Dopingless TFET Elemental Semiconductor Enhanced Turn-on Steep Subthreshold Swing Field Effect Transistors Germanium Hole Tunnelling Insulated Gate Field Effect Transistors Low-energy Bandgap Germanium Material Negative Gate Voltage On-current Point Subthreshold Swing Probability Semiconductor Doping Statistics Tunnel Transistors Tunnelling Probability
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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