NDLI: Multi-contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

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Multi-contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

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The Journal of Engineering

Multi-contact radiofrequency microelectromechanical systems switch with power divider/combiner structure for high power applications

Content Provider	IET Digital Library
Author	Gong, Zhuhao Zhang, Yulong Guo, Xin Liu, Zewen
Abstract	Design, fabrication, and measurement of a metal-contact radiofrequency (RF) microelectromechanical systems switch with a power divider/combiner structure for high power applications are presented in this work. The multi-contact switch with parallel cantilever beams is implemented in a Y-junction power divider/combiner, which suppresses the uneven current distribution through each contact and results in higher power handling capability at high frequency. The measurement results indicate the excellent RF performance of the switch fabricated on the Borofloat glass substrate with insertion loss and isolation of 0.22 dB and 29 dB@10 GHz, respectively. A lumped-element model is developed and it fits well with the measured S-parameters with the contact resistance of 0.6 Ω and up-state capacitance of 1 fF for each contact. The switch can handle power up to 2 W@10 GHz under prolonged hold-down conditions for 2 h. The reliability measurement shows that the packaged switch can operate for over 1 million cycles at 200 mA under cold-switching conditions.
Starting Page	1075
Ending Page	1078
Page Count	4
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 8, Aug (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.0134
Journal	Micro & Nano Letters
Publisher Date	2018-08-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Borofloat Glass Substrate Cantilevers Capacitance 1.0 FF Cold-switching Condition Contact Resistance Current 200.0 MA Current Distribution Design And Modelling of MEMS And NEMS Device Excellent RF Performance Fabrication of MEMS And NEMS Device Frequency 10.0 GHz High Power Application Loss 0.22 DB Lumped Parameter Network Lumped-element Model Metal-contact Radiofrequency Microelectromechanical System Switch Microswitches Microwave IC Microwave Switches Multicontact Radiofrequency Microelectromechanical System Switch Packaged Switch Parallel Cantilever Beam Power Combiners Power Divider Power Divider-combiner Structure Relay And Switches Reliability Measurement Resistance 0.6 Ohm S Parameter Time 2.0 Hour Uneven Current Distribution Suppression Waveguide And Microwave Transmission Line Component Y-junction Power Divider-combiner
Content Type	Text
Resource Type	Article

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