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| Content Provider | IET Digital Library |
|---|---|
| Author | Li, Zhenglong Ni, Jian Zhang, Shuaiyuan Li, Chang Du, Yangyang Zhang, Yaofang Cai, Hongkun Li, Juan Zhang, Jianjun |
| Abstract | To improve light absorption, in this study, the narrow band gap highly-ordered free-standing hydrogenated amorphous germanium nanoparticles (a-Ge:H NPs) were introduced into the CH3NH3PbI3−x Cl x films. Here, the NPs were fabricated by means of the radio frequency plasma enhanced chemical vapour deposition system. The effects of hydrogen dilution ratio (RH) on the microstructure and bonding configuration of a-Ge:H NPs were investigated by Raman, transmission electron microscopy and Fourier transform infrared spectroscopy measurements. As RH increases, an improvement in the structure order of a-Ge:H NPs was observed. Compared with the pure CH3NH3PbI3−x Cl x films, the light absorption of the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers was improved, and the surface coverage of the hybrid active layers nearly reached 100%. This new finding provided a novel way to solve the universal unfavourable surface coverage problem that existed in the ultrasonic spray-coating process. Meanwhile, compared with the device that is based on pure CH3NH3PbI3−x Cl x films, due to the enhanced light absorption in the visible range, a ∼14.6% enhancement in the power conversion efficiency was achieved based on the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers. |
| Starting Page | 1111 |
| Ending Page | 1116 |
| Page Count | 6 |
| Volume Number | 13 |
| e-ISSN | 17500443 |
| Issue Number | Issue 8, Aug (2018) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/13/8 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0876 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2018-08-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Amorphous And Glassy Semiconductors Amorphous Semiconductors Bonding Configuration Bonds (chemical) Chemical Vapour Deposition Elemental Semiconductor Epitaxy Fourier Transform Infrared Spectra Fourier Transform Infrared Spectroscopy Ge:H Germanium Hydrogen Hydrogen Dilution Ratio Infrared And Raman Spectra in Disordered Solids Light Absorption Microstructure Nanofabrication Nanometre-Scale Semiconductor Fabrication Technology Nanoparticle Nanotube And Nanostructured Material Narrow Band Gap Highly-ordered Free-standing Hydrogenated Amorphous Germanium NanoParticle Narrow Band Gap SemiConductor Optical Property of Amorphous And Glassy SemiConductor And Insulator (thin Film/low-dimensional Structure) Optical Property of Elemental SemiConductor (thin Film/low-dimensional Structure) Organic Compound Perovskite Solar Cell Photoelectric Conversion Plasma Application in Manufacturing And Material Processing Plasma CVD Power Conversion Efficiency Radiofrequency Plasma Enhanced Chemical Vapour Deposition Raman Spectra Raman Spectroscopy Semiconductor Growth Semiconductor Thin Film Solar Cell And Array Structure Structure of Amorphous, Disordered And Polymeric Material Structure of Solid Clusters Thin Film Growth Transmission Electron Microscopy Ultrasonic Spray-coating Visible Range |
| Content Type | Text |
| Resource Type | Article |
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