NDLI: Double gate symmetric tunnel FET: investigation and analysis

Content Provider	IET Digital Library
Author	Ramaswamy, Sindhu Kumar, M. Jagadesh
Abstract	In this work, using calibrated 2D simulations, the authors first demonstrate that the OFF-state current and subthreshold swing (SS) are significantly high for the double gate Ge source/drain symmetric p–n–p tunnel field effect transistor (TFET) with a silicon channel without n+ pockets at the source- and drain-channel interfaces. They further establish that using n + pockets at the source- and drain-channel interface, the Ge source/drain symmetric p–n–p TFET exhibits a 130 times improvement in I ON/I OFF ratio and a 26% reduction in SS due to the two orders of magnitude reduction in its OFF-state current when compared with the one without the n+ pockets. The results also indicate that the Ge source/drain symmetric p–n–p TFET suffers from a low output conductance at low drain voltages. Since the proposed device exhibits bidirectional current flow, it can be easily integrated with the conventional complementary metal-oxide semiconductor technology.
Starting Page	365
Ending Page	370
Page Count	6
ISSN	1751858X
Volume Number	11
e-ISSN	17518598
Issue Number	Issue 4, Jul (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/11/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2016.0324
Journal	IET Circuits, Devices & Systems
Publisher Date	2016-12-09
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bidirectional Current Flow Calibrated 2D Simulations CMOS Integrated Circuit CMOS Technology Complementary Metal-oxide Semiconductor Technology Double Gate Source-drain Symmetric P-n-p Tunnel Field Effect Transistor Drain-channel Interfaces Field Effect Device Field Effect Transistors Germanium Insulated Gate Field Effect Transistors Off-state Current Source-channel InterFace Subthreshold Swing TFET Tunnel Transistors
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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