NDLI: Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

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The Journal of Engineering

Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

Content Provider	IET Digital Library
Author	Gupta, Sarthak Sharma, Dheeraj Soni, Deepak Yadav, Shivendra Aslam, Mohd. Yadav, Dharmendra Singh Nigam, Kaushal Sharma, Neeraj
Abstract	In this work, the authors have reported the reliability issues of dual material control gate tunnel field effect transistor (DMCG-TFET) and proposed heterogeneous gate dielectric dual metal control gate tunnel field effect transistors (HD DMCG-TFETs) in terms of interface trap charges (ITCs). The positive and negative types of localised charges at the semiconductor/insulator interface cause degradation in the device performance (DC/RF). In this regard, the proposed structure which includes combination of low-K and high-K dielectric improves the immunity towards the ITCs at the interface of semiconductor/insulator with better performance. In this concern, the study has analysed the impact of ITCs on DC and analogue/RF performances of the DMCG-TFET and HD DMCG-TFET in terms of various parameters like electric field, energy band diagram, carrier concentration, transfer characteristics, transconductance ( g m ), cutoff frequency ( f T ) and gain bandwidth product. Further to this, impact on device linearity parameters is also analysed through higher order of transconductance coefficients ( g m 3 ), VIP2, VIP3 and IIP3.
Starting Page	1192
Ending Page	1196
Page Count	5
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 8, Aug (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0869
Journal	Micro & Nano Letters
Publisher Date	2018-08-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Carrier Density Dielectric Material Dual Material Control Gate Tunnel Field Effect Transistor Dual Metal Control Gate Tunnel Field Effect Transistors Field Effect Device Field Effect Transistors HD DMCG-TFET Interface State Interface Trap Charges ITCs Reliability Semiconductor Device Breakdown Semiconductor Device Reliability Semiconductor/insulator Interface Tunnel Transistors
Content Type	Text
Resource Type	Article

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