NDLI: Comparison of Verilog-A compact modelling strategies for spintronic devices

Content Provider	IET Digital Library
Author	Jabeur, K. Granger, F. Bernard Pendina, G. Di Prenat, G. Dieny, B.
Abstract	Magnetic random access memory based on magnetic tunnel junctions (MTJs) is among the most attractive technologies of emerging non-volatile memories. However, the integration of spin-based devices in integrated circuits is still hindered by a lack of established standard electrical simulator models. Many of such models have been proposed during the past decade which can be classified into two categories: the first ones are based on the physical Landau-Lifshitz-Gilbert (LLG) equation describing real-time MTJ magnetic switching dynamics; the second one uses analytical expressions for switching thresholds derived from the LLG equation. The aim of this reported work was to investigate for the first time the capability of each strategy to fulfil the need of industrial standard electrical simulation tools and pave the path towards a standard industrial model. Multi-simulator compatibility, efficient runtime, accuracy and reliability are the three main assets of a device model. It is shown that using the Cadence® tools suite with the Spectre® simulator, the LLG modelling strategy overcomes the analytical approach in terms of accuracy and speed with a 7× faster runtime. Both models require nearly the same hardware memory resources.
Starting Page	1353
Ending Page	1355
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.1083
Journal	Electronics Letters
Publisher Date	2014-09-05
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Cadence® Tools Suite Digital Circuit Design, Modelling And Testing Hardware Description Languages Integrated Circuit Modelling Integrated Circuit Reliability Landau–Lifshitz–Gilbert Equation Magnetic Random Access Memory Magnetic Switching Dynamics Magnetic Tunnel Junctions Magnetic Tunnelling Magneto-acoustic Wave Device Magnetoelectronics Magnetoresistive Wave Device Magnetostrictive And Magnetostatic Wave Device Memory Circuit MRAM MRAM Device Multisimulator Compatibility Nonvolatile Memories Random-access Storage Reliability Spectre® Simulator Spintronic Device Storage Application Verilog-A Compact Modelling
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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