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Content Provider | IET Digital Library |
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Author | Bao, Bo Cheng |
Abstract | The Comment of Riaza is acknowledged. In response, it is argued that by establishing the complete corresponding relations between the voltage-current relation and the constitutive relation of memristors, the conclusions in the original Letter are appropriate. It is further illustrated that if the voltage-current model is used, the memristor is regarded as a dynamic element, whereas if the flux–charge model is utilised, the memristor is treated as a non-dynamic element. The results indicate that the memristor initial conditions described by the constitutive relation should be assigned in the modelling of memristive circuits, and the dynamic nature of memristors is related with the memristive circuit model. |
Starting Page | 1344 |
Ending Page | 1345 |
Page Count | 2 |
ISSN | 00135194 |
Volume Number | 50 |
e-ISSN | 1350911X |
Issue Number | Issue 19, Sep (2014) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/50/19 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2014.1963 |
Journal | Electronics Letters |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Constitutive Relation Dynamic Element Flux-charge Model Memristive Circuit Model Memristors Nondynamic Element Resistor Voltage-current Relation |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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