NDLI: Ultra-energy-efficient CMOS/magnetic non-volatile flip-flop based on spin-orbit torque device

Content Provider	IET Digital Library
Author	Jabeur, K. Pendina, G. Di Prenat, G.
Abstract	The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliability is increased by separating the read and the write paths. Furthermore, SOT-induced magnetisation switching can be very fast, thanks to a low-resistive writing path. The writing operation is symmetrical. Thus, it requires the same current density to switch between the parallel and antiparallel states. All these advantages make the SOT-MTJ device an ultimate candidate for introducing non-volatility in ultra-fast and power-efficient integrated circuits. A mixed CMOS/magnetic non-volatile flip-flop (NVFF) is described. The proposed architecture offers the possibility to use the usual CMOS flip-flop functionality with possible magnetic data store and restore operations while keeping non-volatility when the circuit is powered off. With a 135 nm dimension, the SOT-MTJ-based NVFF demonstrated a very high switching with a 5× decrease in terms of writing energy/bit when compared with an STT device.
Starting Page	585
Ending Page	587
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 8, Apr (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.0372
Journal	Electronics Letters
Publisher Date	2014-04-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Antiparallel States CMOS Flip-flop Functionality CMOS Integrated Circuit CMOS Logic Circuit Data Storage Flip Flops Integrated Circuit Reliability Logic And Switching Circuit Logic Circuit Low-resistive Writing Path Magnetic Data Storage Magnetic Logic Magnetic Storage Magneto-acoustic Wave Device Magnetoelectronics Magnetoresistive Wave Device Magnetostrictive And Magnetostatic Wave Device NVFF Parallel State Power Integrated Circuit Power-efficient Integrated Circuit Reliability Size 135 Nm SOT-induced Magnetisation Switching SOT-MTJ Spin-orbit Torque Device Spin-orbit-torque Magnetic Tunnel Junction Storage on Moving Magnetic Media STT Device Three-terminal Architecture Ultra-energy-efficient CMOS-magnetic Nonvolatile Flip-flop
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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