NDLI: 500 V dual gate deep-oxide trench SOI-LIGBT with improved short-circuit immunity

Content Provider	IET Digital Library
Author	Zhang, Long Zhu, Jing Sun, Weifeng Yu, Hui Du, Yicheng Gu, Yan
Abstract	A 500 V deep-oxide trench silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with improved short-circuit capability is proposed. The structure features dual trench gates: one gate (G1) extended to the buried oxide and the other gate (G2) arranged in the deep-oxide trench in the drift region. In the off-state, G2 acts as an emitter-side field plate to shield the lateral electric field from the collector side. In the on-state, negative voltage is applied to G2, leading to a hole inversion layer close to the deep-oxide trench. The hole inversion layer reroutes the hole current and provides an additional heat dissipation path. Experimental results show that the proposed structure exhibits high short-circuit immunity without degradation of the breakdown voltage. The short-circuit withstand time of the proposed structure is 1.55 times that of the conventional one, when the voltage of G2 is −5 V.
Starting Page	78
Ending Page	80
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 1, Jan (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.3557
Journal	Electronics Letters
Publisher Date	2014-12-18
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Buried Oxide Collector Side Drift Region Dual Gate Deep-oxide Trench SOI-LIGBT Dual Trench Gate Emitter-side Field Plate Heat Dissipation Path Hole Current Hole Inversion Layer Improved Short-circuit Immunity Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Lateral Electric Field Lateral Insulated Gate Bipolar Transistor On-state Negative Voltage Silicon-on-insulator Voltage -5 V Voltage 500 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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