NDLI: Impact of temperature on negative capacitance field-effect transistor

Content Provider	IET Digital Library
Author	Jo, Jaesung Shin, Changhwan
Abstract	A negative capacitance field-effect transistor (FET) with sub-60 mV/decade subthreshold slope (SS) at different temperatures (i.e. 14.8 mV/decade at 300 K, 15.7 mV/decade at 360 K and 24.3 mV/decade at 400 K) is experimentally demonstrated. A detailed account of the fabrication process of a negative capacitor is first introduced, followed by the measurement setup for the negative capacitance FET. The impact of temperature on negative capacitance FETs is investigated: (i) the equation for the internal voltage gain in the FET as a function of temperature is derived using Gibbs free energy and (ii) internal voltage against gate voltage (V Int against V G), internal voltage gain against gate voltage (dV Int/dV G against V G) and drain current against gate voltage (I D against V G) curves at different temperatures are measured. It is confirmed that internal voltage amplification can be achieved using the ferroelectric capacitor. However, the magnitude of the step-up voltage transformation is reduced, i.e. from 9.5 at 300 K to 2.6 at 400 K. Additionally, the SS is slightly increased (i.e. degrading from 14.8 mV/decade at 300 K to 24.3 mV/decade at 400 K) with increasing temperature; however, all SS values are better than the physical limits of SS as dictated by Boltzmann statistics.
Starting Page	106
Ending Page	108
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 1, Jan (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.3515
Journal	Electronics Letters
Publisher Date	2014-12-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplification Boltzmann Statistics Capacitor Ferroelectric Capacitor Ferroelectric Device FET Field Effect Device Field Effect Transistors Free Energy Gibbs Free Energy Internal Voltage Amplification Negative Capacitance Field-effect Transistor Negative Capacitor Fabrication Process Statistics Step-up Voltage Transformation Subthreshold Slope Temperature 300 K Temperature 360 K Temperature 400 K Temperature Measurement Thermal Variables Measurement
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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