NDLI: Snapback-free reverse conducting IGBT with p-float and n-ring surrounding trench-collector

Content Provider	IET Digital Library
Author	Li, Jie Huang, Mingmin Chen, Chang Yang, Zhimei Ma, Yao Gong, Min
Abstract	A reverse conducting (RC) insulated gate bipolar transistor (IGBT) with p-float and n-ring surrounding trench-collector is proposed. The p-floats surrounding sidewalls of trench-collectors suppress snapback and also avoid snapback when there are semiconductor/trench-collector interface charges (Q f). The n-rings surrounding the top of the trench-collectors speed up the forward recovery and ensure a high breakdown voltage. Technology computer aided design (TCAD) simulations are carried out to compare the proposed RC-IGBT and the RC-IGBT with p-poly trench-collector (PTC RC-IGBT). With Q f = 1 × 1011 cm−2, the proposed RC-IGBT is snapback-free while the PTC RC-IGBT has a snapback voltage of 4.43 V. The peak forward recovery voltage of the proposed RC-IGBT (12 V) is much lower than that of the PTC RC-IGBT (246 V). Besides, the reverse recovery charge of the two RC-IGBTs is 48% lower than that of the PiN diode.
Starting Page	1337
Ending Page	1340
Page Count	4
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 24, Nov (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/24
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.2351
Journal	Electronics Letters
Publisher Date	2020-11-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Breakdown Voltage Design And Testing Equivalent Circuit Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors N-ring Surrounding Trench-collector P-floats Surrounding Sidewalls P-poly Trench-collector Peak Forward Recovery Voltage PTC RC-IGBT Reverse Recovery Charge Semiconductor Device Model Semiconductor Device Modelling Semiconductor-trench-collector Interface Charges Snapback Voltage Snapback-free Reverse Conducting IGBT TCAD Simulations Technology CAD (electronics) Trench-collectors Speed Voltage 4.43 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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