NDLI: Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter V gE-np

Content Provider	IET Digital Library
Author	Peng, Yingzhou Zhou, Luowei Du, Xiong Sun, Pengju Wang, Kaihong Cai, Jie
Abstract	An electrical method for junction temperature estimation of insulated-gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal L E. The temperature-dependent falling collector current during turn-off transition would cause a negative voltage drop in the gate-main emitter voltage waveform v gE. Therefore, this negative voltage drop V gE-np is proportional to the junction temperature. A double-pulse test circuit is developed to verify the accuracy and feasibility of the proposed method. The impacts of collector–emitter voltage V ce, collector current I c and bond-wires cut-off are also be discussed theoretically and experimentally. The experimental results show that the proposed V gE-np has a linear relationship with junction temperature as theoretical analysis and it is a bond-wires cut-off independent parameter in some special test point, which offers an effective way to estimate junction temperature without package destruction. The advantages of the proposed method include good linearity, bond-wires failure immunity and adequate sensitivity with junction temperature.
Starting Page	320
Ending Page	328
Page Count	9
ISSN	17554535
Volume Number	11
e-ISSN	17554543
Issue Number	Issue 2, Feb (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/11/2
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2017.0168
Journal	IET Power Electronics
Publisher Date	2017-09-19
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Bond Wire Lift-off Independent Parameter Bond-wire Cut-off Bond-wire Failure Immunity Collector-emitter Voltage Double-pulse Test Circuit Electrical Method Gate-main Emitter Voltage Waveform IGBT Module Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Insulated-gate Bipolar Transistors Junction Temperature Estimation Main Emitter Terminal Negative Voltage Drop Parasitic Inductance Temperature-dependent Falling Collector Current Turn-off Transition
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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