NDLI: A CMOS voltage reference combining body effect with switched-current technique

Content Provider	IEEE Xplore Digital Library
Author	Ning Ren Hao Zhang Yoshihara, T.
Copyright Year	2012
Description	Author affiliation: Graduate School of Information, Production and Systems, Waseda University, Fukuoka, Japan. 808-0135 (Ning Ren; Hao Zhang; Yoshihara, T.)
Abstract	A precise CMOS voltage reference using body effect and switched-current technique is presented in this paper. To reduce static current, the threshold voltage with body effect in nMOSFET transistor is utilized instead of the VBE of BJT transistor. Owning to the switched-current technique, only one transistor is required to generate the reference voltage, so that the threshold voltage mismatch in conventional two-transistor configuration is eliminated. The proposed circuit is designed and simulated under 0.18-µm CMOS technology. The output voltage is 147.44 mV, and the temperature coefficient is less than 5.2 ppm/°C ranging from −20 °C to 100 °C. The voltage line-sensitivity is 0.44 %/V ranging from 1.5 V to 3.3 V. The power-supply-rejection-ratio (PSRR) is −56 dB at 100 Hz. The average current consumption is about 16 µA.
Starting Page	92
Ending Page	95
File Size	309531
Page Count	4
File Format	PDF
ISBN	9781467329897
e-ISBN	9781467329903
e-ISBN	9781467329880
DOI	10.1109/ISOCC.2012.6407047
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistors switched-current technique body effect Capacitors MOSFET circuits subthreshold Threshold voltage CMOS integrated circuits Transistors CMOS voltage reference Switching circuits
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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