NDLI: Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

Content Provider	IEEE Xplore Digital Library
Author	Junha Lee Hanwool Jeong Younghwi Yang Jisu Kim Seong-Ook Jung
Copyright Year	2012
Description	Author affiliation: School of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea (Junha Lee; Hanwool Jeong; Younghwi Yang; Jisu Kim; Seong-Ook Jung)
Abstract	In this paper, we research on fin thickness (Tfin) and fin height (Hfin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with Tfin and fin Hfin. This makes threshold voltage (Vth) vary. Thus, Tfin and Hfin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since Vth variation is a dominant factor determining them. If Tfin increases, the mean of RSNM (μRSNM) and the mean of WWTV (μWWTV) decreases and increases, respectively, while the standard deviation of RSNM (σRSNM) and WWTV (σWWTV) are almost not changed. If Hfin increases, the μRSNM and μWWTV decreases and increases, respectively, while both σRSNM and σWWTV decrease. However, for a sufficiently small Tfin, the effect of Hfin on μRSNM and μWWTV becomes negligible.
Starting Page	479
Ending Page	482
File Size	335082
Page Count	4
File Format	PDF
ISBN	9781467329897
e-ISBN	9781467329903
e-ISBN	9781467329880
DOI	10.1109/ISOCC.2012.6406900
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-04
Publisher Place	Korea (South)
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	FinFET Logic gates FinFETs Stability analysis Fin thickness Fin height Arrays Tri-gate SRAM Stabillity
Content Type	Text
Resource Type	Article

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