NDLI: Process control monitor based extraction procedure for statistical compact MOSFET modeling

Content Provider	IEEE Xplore Digital Library
Author	Yakupov, M. Tomaszewski, D. Grabinski, W.
Copyright Year	2010
Description	Author affiliation: Division of Silicon Microsystem and Nanostructure Technology, Institute of Electron Technology, Warsaw, Poland (Yakupov, M.; Tomaszewski, D.) \|\| GMC, Commugny, Suisse, Switzerland (Grabinski, W.)
Abstract	The paper reviews different approaches of the semiconductor device and integrated circuit statistical modeling. A backward propagation of variance method has been used to estimate the EKV compact model parameter distributions. A detailed analysis of this approach has been done in terms of efficiency, and accuracy aspects. The determined distributions of the EKV model process parameters responsible for an analog IC variability have been used for evaluation of statistical distributions of simple operational amplifier performances.
Starting Page	85
Ending Page	90
File Size	355388
Page Count	6
File Format	PDF
ISBN	9781424470112
e-ISBN	9788392875642
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-24
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	DEPT OF MICROELECTRON
Subject Keyword	Monte-Carlo analysis analog IC MOS devices Phase change materials Semiconductor device modeling operational amplifier performance Analytical models EKV CMOS corner analysis statistical modeling backward propagation of variance CMOS integrated circuits Integrated circuit modeling
Content Type	Text
Resource Type	Article

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