NDLI: Analytical inversion-mode varactor modeling based on the EKV model and its application to RF VCO design

Content Provider	IEEE Xplore Digital Library
Author	Bremer, J. Peikert, T. Mathis, W.
Copyright Year	2010
Description	Author affiliation: Institute of Theoretical Electrical Engineering, Leibniz University of Hannover, Germany (Bremer, J.; Peikert, T.; Mathis, W.)
Abstract	An analytical modeling approach for the CV-characteristics of inversion-mode MOS varactors that is based on the continuous EKV model equations is presented. Based on this approach it is possible to obtain an analytical expression for the effective large signal capacitance of varactors incorporated into a VCO and to calculate and optimize the resulting VCO tuning sensitivity KVCO. We present a simple but quite accurate hyperbolic tangent approximation for the CV-characteristic of inversion-mode MOS varactors that depends on selected design variables and is therefore well suited to be used in a systematic VCO design flow. In order to verify the validity and accuracy of the modeling approach the CV-characteristics obtained by using the EKV based simulation model are compared with Spectre (Cadence) simulations using a BSIM 3.3 transistor model. As reference semiconductor technology we use a 0.35 µm CMOS process (C35) from austriamicrosytems (AMS).
Starting Page	64
Ending Page	69
File Size	301501
Page Count	6
File Format	PDF
ISBN	9781424470112
e-ISBN	9788392875642
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-24
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	DEPT OF MICROELECTRON
Subject Keyword	Varactors EKV transistor model AM-FM conversion single-ended back-to-back varactor configuration VCO tuning sensitivity analytical varactor model effective large signal capacitance inversion-mode MOS varactor Tuning Analytical models Voltage-controlled oscillators Logic gates Capacitance Mathematical model
Content Type	Text
Resource Type	Article

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