NDLI: Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

Content Provider	IEEE Xplore Digital Library
Author	Kyung-Chang Ryoo Jeong-Hoon Oh Sung-hun Jung Byung-Gook Park
Copyright Year	2010
Description	Author affiliation: Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea (Kyung-Chang Ryoo; Jeong-Hoon Oh; Sung-hun Jung; Byung-Gook Park)
Abstract	Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction. We examine the optimal NiO oxygen content and Al insertion prove the mechanism which reduces reset current. It is observed that the reset current was greatly reduced down to 0.15mA using proposed Al-inserted NiO cell structure that successfully contributes to reset process.
Starting Page	356
Ending Page	359
File Size	486456
Page Count	4
File Format	PDF
ISBN	9781424488964
e-ISBN	9781424488971
DOI	10.1109/NMDC.2010.5652485
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance NiO AlO Random access memory Diffusion processes Switches Materials Very large scale integration Reset Current Unipolar switching Oxidation RRAM
Content Type	Text
Resource Type	Article

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