NDLI: Analysis and design of carbon nanotube based field effect transistors for nano infrared sensors

Content Provider	IEEE Xplore Digital Library
Author	Hongzhi Chen Ning Xi Lai, K.W.C. Fung, C.K.M. Liangliang Chen Jianyong Lou
Copyright Year	2010
Description	Author affiliation: Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824 USA (Hongzhi Chen; Ning Xi; Lai, K.W.C.; Fung, C.K.M.; Liangliang Chen; Jianyong Lou)
Abstract	It has been demonstrated that carbon nanotube field effect transistor (CNTFET) is a promising device to improve the performance of carbon nanotube (CNT) infrared (IR) sensors by modulating the doping level of the CNT channel. However, how to optimize the performance of the CNTFET based IR sensor is not well understood. In particularly, there was limited study on the design of transistor's gate structure, which determines its energy band profile. In order to improve our understating of its detection mechanism and guide for an optimized design, a multi-gate CNTFET was fabricated, which can control the doping level of the source, drain and nanotube channel independently. Photovoltaic characteristics were observed in bias dependent measurement by varying the intensity of incident IR source. In addition, the polarization dependent measurement was conducted, the detector showed clearly polarization anisotropy, and highest photocurrent was obtained when the polarization is parallel to the nanotube. Its temporal photocurrent responses using different gates were investigated. The results showed that photocurrent had similar photo-responses by applying voltages to the gates at different positions, implying the sensor design can be simplified into a single gate.
Starting Page	164
Ending Page	168
File Size	508742
Page Count	5
File Format	PDF
ISBN	9781424488964
e-ISBN	9781424488971
DOI	10.1109/NMDC.2010.5652169
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Logic gates Carbon nanotubes CNTFETs Photoconductivity
Content Type	Text
Resource Type	Article

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