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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fu, J. Crans, W. Eysenga, W.J. |
| Copyright Year | 2004 |
| Description | Author affiliation: X-FAB Semicond. foundries AG, Erfurt, Germany (Fu, J.) |
| Abstract | Model parameters used to describe post-implant arsenic and boron diffusions were selected with care and calibrated by using the inverse modeling optimizer "PROFILE". The parameter calibrations performed were based on the best fitting of numerical process simulation to the corresponding experimental SIMS (secondary ion mass spectrometry) measurement data. In this case, grouped model parameters were calibrated in cascade, resulting in good reproduction of dopant depth profiles. On the basis of the extracted parameters, together with the corresponding uncertainties for calibration, the dopant diffusion kinetics and mechanisms were analyzed and discussed. |
| Sponsorship | IEEE-CPMT |
| Starting Page | 191 |
| Ending Page | 198 |
| File Size | 878470 |
| Page Count | 8 |
| File Format | |
| ISBN | 0780384202 |
| DOI | 10.1109/ESIME.2004.1304040 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-05-10 |
| Publisher Place | Belgium |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Calibration Semiconductor process modeling Circuit simulation Ion implantation Annealing Inverse problems Silicon Predictive models Mass spectroscopy Application specific integrated circuits |
| Content Type | Text |
| Resource Type | Article |
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