NDLI: Degradation of NMOSFETs during high-field injection with reverse biased voltage at source and drain junctions

Content Provider	IEEE Xplore Digital Library
Author	Jarwal, R.K. Misra, D.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA (Jarwal, R.K.)
Abstract	Degradation to threshold voltage V/sub t/ and transconductance g/sub m/ of n-channel MOSFETs due to reverse biased potential at source and drain junctions during high-field electron injection were studied. Both gate injection and substrate injection modes were used to estimate initial oxide traps and breakdown characteristics. During gate injection, stress induced V/sub t/ and g/sub m/ shifts show minimal dependence on the reverse biased floating voltage whereas during substrate injection V/sub t/ shifts linearly depend on the floating reverse biased voltage and g/sub m/ shifts show minimal dependence. An asymmetry in the distribution of electron traps at the gate-oxide and substrate-oxide interfaces was observed. For gate injection the oxide field at breakdown is higher than substrate injection and these field values are independent of reverse biased voltage. Charge to breakdown decreases with reverse biased voltage for gate injection and increases for substrate injection. Moreover, charge to breakdown values for gate injections are smaller than substrate injection.
Sponsorship	Broadcom India
Starting Page	485
Ending Page	490
File Size	497089
Page Count	6
File Format	PDF
ISBN	0769508316
ISSN	10639667
DOI	10.1109/ICVD.2001.902705
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-01-07
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation MOSFETs Stress Breakdown voltage Plasma sources Electric breakdown Plasma materials processing Threshold voltage Electron traps Plasma simulation
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture

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