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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tyaginov, S.E. Gos, W. Grasser, T. Sverdlov, V. Schwaha, P. Heinzl, R. Stimpfl, F. |
| Copyright Year | 2009 |
| Description | Author affiliation: Christian Doppler Laboratory for TCAD at the Institute for Microelectronics, TU Wien, Vienna, Austria (Tyaginov, S.E.; Gos, W.; Grasser, T.) || Institute for Microelectronics, TU Wien, Vienna, Austria (Sverdlov, V.; Schwaha, P.; Heinzl, R.; Stimpfl, F.) |
| Abstract | We extend the McPherson model in a manner to capture the effect of the whole surrounding lattice on the siliconoxygen bond-breakage energetics. It is shown that the Mie- Grüneisen potential with the constants used in the original version of the model is not suitable under the consideration of the whole crystal. Other empirical pair-wise interatomic potentials, namely TTAM and BKS have been tested for the analysis of the bond rupture energetics. It is shown that the secondary minimum corresponding to the transition of the Si atom from the 4-fold to the 3-fold coordinated position occurs in a different direction with a rather high activation energy (~ 6 eV). The tunneling of the Si ion between the primary and the secondary minima has been treated within the WKB approximation. We demonstrate that the contribution of neighboring SiO tetrahedrons substantially decreases the breakage rate, making bond rupture by means of an electric field alone practically impossible. Therefore, the common action of an electric field and another contribution (bond weakening by hole capture, structural disorder and energy deposited by particles) is essential for Si-O bond-breakage. |
| Starting Page | 514 |
| Ending Page | 522 |
| File Size | 1031794 |
| Page Count | 9 |
| File Format | |
| ISBN | 9781424428885 |
| ISSN | 15417026 |
| DOI | 10.1109/IRPS.2009.5173306 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-04-26 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bonding Microelectronics Energy capture Tunneling Hot carriers Silicon Potential energy Hydrogen Laboratories Electronic mail tunneling Si-O bond bond-breakage WKB pair-wise potentials TTAM BKS Mie-Grüneisen potential silicon dioxide |
| Content Type | Text |
| Resource Type | Article |
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